Point defects identification and modification in the Si-SiO2 system and its influence on the interface properties

Duration of the project

01.06.2019. - 15.11.2019.

Countries and institutions involved in the project

Riga Technical University
Forschungszentrum Jülich
University of Tartu

Aim of the project

The goal of the Project is to investigate charge formation in the Si-SiO2 system and its diminishing by appropriate choice of the oxidation condition by means of EPR and IR spectroscopy, CV spectroscopy, SEM and deflection measurements. Laser irradiation and ultrasonic treatment were used for interface properties modification. It has been established that at the oxidation temperature in the range of 11250C-11300C in SiO2 film with a thickness of 0.2-0.3 μm at the interface appears low positive or negative charge connected with acceptors formed by Si vacancies and compensates the positive charge in SiO2. Integrated circuits technology conditions that allow the interface charge diminishing were introduced in semiconductor plant ALFA .

Main activities of the project

  1. Riga, Latvia. Samples preparation and laser irradiation.
  2. Tartu, Estonia. Samples ordering and measurements.
  3. Jülich. Samples investigation.

Target group and number of persons involved

The direct aim group of the project will disseminate the obtained results, presenting them are the conference and in scientific seminar of Riga Technical University, as well as publishing scientific paper in journals with high enough impact factor, which are cited in SpringerLink, SCOPUS, DBLP or Thomson Reuters (ISI WEB of Knowledge) data bases. Totally, we plan at least 1 publication (or monograph) as well as participation in 1 conference and 1 seminar. It is planned to organize a seminar about the topics of project during its execution. The number of persons involved in direct target group is 5.


The indirect target group of the project will get the information about the obtained scientific results, participating in seminar, as well as from the published scientific paper in the above-mentioned data bases. In this way, the access to the project results will be ensured for the indirect target group. These results will be used in the education process as a complement to recent achievements in science, as well as in the development of new directions of manufacturing. The number of persons involved in indirect target group is 20.

Public events

Seminar includes the direct and indirect aim groups:


November 14, 2019;


Faculty of Material Science and Applied Chemistry, Riga Technical University, Paula Valdena street 3/7, Riga;


Prof. S.Vitusevich, Dr. D.Kropman.

Press release