Point defects identification and modification in the Si-SiO2 system and its influence on the interface properties

The goal of the Project was to investigate charge formation in the Si-SiO₂ system and its diminishing by appropriate choice of the oxidation condition by means of EPR and IR spectroscopy, CV spectroscopy, SEM and deflection measurements. Laser irradiation and ultrasonic treatment were used for interface properties modification. It has been established that at the oxidation temperature in the range of 1125⁰C-1130⁰C in SiO₂ film with a thickness of 0.2-0.3 μm at the interface appears low positive or negative charge connected with acceptors formed by Si vacancies and compensates the positive charge in SiO₂. Integrated circuits technology conditions that allow the interface charge diminishing were introduced in semiconductor plant ALFA .

1. Riga, Latvia. Samples preparation and laser irradiation.
2. Tartu, Estonia. Samples ordering and measurements.
3. Jülich. Samples investigation.

The direct target group of the project disseminated the obtained results, presenting them are the conference and in scientific seminar at Forschungszentrum Jülich, as well as submitted for publishing a scientific paper, which will be cited in SpringerLink, SCOPUS, DBLP or Thomson Reuters (ISI WEB of Knowledge) data bases. The number of persons involved in direct target group was 5.

The indirect target group of the project got the information about the obtained scientific results, participating in seminar, as well as from the published scientific paper in the above-mentioned data bases. In this way, the access to the project results will be ensured for the indirect target group. These results will be used in the education process as a complement to recent achievements in science, as well as in the development of new directions of manufacturing. The number of persons involved in indirect target group was 50.

Seminar includes the direct and indirect aim groups:

Date: November 4, 2019

Venue: Forschungszentrum Jülich