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Project title:

Point defects identification in Si-SiO2 system and its modification by laser radiation

Time of implementation

 01.07. - 15.12.2018

Involved countries and institutions:

1. Estonia, Tallinn University.

2. Latvia, Riga Technical University;

3. Germany, Forschungszentrum Jülich, Bioelectronics (ICS-8)

Aim(s) of the project:

During more than 20 years Integral serquits technology in Estonia were studied among other methods, such as MOS capacitance spectroscopy  Electron microscopy. IR spectroscopy, by radiospectroscopicalmethods (EPR,NMR). In Estonia Semiconductors development is over. The obtained results were used in Semiconductor Plant ALFA (Latvia).In our previous Projects it has been shown, that in Si-SiO2 structures performing at an oxidation temperature of 11250C  internal mechanical stresses and charge at the interface is lower than at 11300C. The dependence of the charge value at the interface on the oxidation temperature is connected to the tensil stresses influence on the Si-Si bond length. It has been proposed that negatively charged centers formed by vacancies influence on the charge value and sign. The purpose of the Project is the use of the obtained results for the  ALFA semiconductor plant.

Target group:

The direct aim group of the project will disseminate the obtained results, presenting them in conferences and in scientific seminars of Tallinn University , Riga Technical University and Forschungszentrum Jülich, as well as publishing scientific papers in journals with high enough impact factor, which are cited in SpringerLink, SCOPUS, DBLP and Thomson Reuters (ISI WEB of Knowledge) data bases.
In total, we plan at least two publications as well as participation in one conferences and two seminars. It is planned to organize a seminar about the topics of project during its execution. The number of persons involved in direct target group is 5.

The indirect target group of the project will get the information about the obtained scientific results, participating in seminars, as well as from the published scientific papers in the above-mentioned data bases. In this way, the access to the project results will be ensured for the indirect target group. These results will be used in the education process as a complement to recent achievements in science, as well as in the development of new directions of manufacturing. The number of persons involved in indirect target group is 20.

Main activities of the project and venue(s) where the project activities will be carried out:

Tallinn University:

Modification of material properties by ultrasonical treatment; Characterization of material properties by different methods  (EPR, CV); Thermal oxidation of Silicium with different temperatures and time.


Riga Technical University,

3/7 Paula Valdena Str.LV-1048, Riga, Latvia.

a) Modification of material properties by laser radiation

b) Characterisation of material properties by different methods  (IR absorption,SEM)

Forschungszentrum Jülich, Bioelectronics (ICS-8)

Experience in nano-biotechnology. Preparation of biosensors.


Public events in the frame of the project

We plan scientific seminars in Tallinn University, Riga Technical University and Forschungszentrum Jülich. The date of the events could be 19th of September 2018 (Jülich) and 19th of October 2018 (Riga). The name of the seminars could be “Laser technology and biosensors”.